VND670SP_08中文资料意法半导体数据手册PDF规格书

描述 Description

The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as low side switches. INA and INB allow to select clockwise or counter clockwise drive or brake; DIAGA/ENA, DIAGB/ENB allow to disable one half bridge and feedback diagnostic. Built-in thermal shutdown, combined with a current limiter, protects the chip in overtemperature and short circuit conditions. Short to battery protects the external connected low-side Power MOSFET.

特性 Features

■ 5V logic level compatible inputs

■ Gate drive for two external power MOSFET

■ Undervoltage and overvoltage shutdown

■ Overvoltage clamp

■ Thermal shutdown

■ Cross-conduction protection

■ Current limitation

■ Very low standby power consumption

■ PWM operation up to 10 KHz

■ Protection against loss of ground and loss of VCC

■ Reverse battery protection