首页>VND670SP_08>规格书详情
VND670SP_08中文资料意法半导体数据手册PDF规格书
VND670SP_08规格书详情
描述 Description
The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as low side switches. INA and INB allow to select clockwise or counter clockwise drive or brake; DIAGA/ENA, DIAGB/ENB allow to disable one half bridge and feedback diagnostic. Built-in thermal shutdown, combined with a current limiter, protects the chip in overtemperature and short circuit conditions. Short to battery protects the external connected low-side Power MOSFET.
特性 Features
■ 5V logic level compatible inputs
■ Gate drive for two external power MOSFET
■ Undervoltage and overvoltage shutdown
■ Overvoltage clamp
■ Thermal shutdown
■ Cross-conduction protection
■ Current limitation
■ Very low standby power consumption
■ PWM operation up to 10 KHz
■ Protection against loss of ground and loss of VCC
■ Reverse battery protection
产品属性
- 型号:
VND670SP_08
- 制造商:
STMICROELECTRONICS
- 制造商全称:
STMicroelectronics
- 功能描述:
Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
2025+ |
SOP-10 |
3645 |
全新原厂原装产品、公司现货销售 |
询价 | ||
ST |
1725+ |
? |
14860 |
只做原装进口,假一罚十 |
询价 | ||
ST |
2447 |
NA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
STMicroelectronics |
24+ |
10-PowerSO |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
询价 | ||
ST |
22+ |
10PowerSO |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST/意法 |
22+ |
SSOP36 |
8000 |
原装正品 |
询价 | ||
STMicroelectronics |
24+ |
SMD |
15600 |
门驱动器ABDVIPOWER |
询价 | ||
ST/意法 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
ST/意法半导体 |
2020+ |
PowerSSO-36 |
7600 |
只做原装正品,卖元器件不赚钱交个朋友 |
询价 | ||
STM |
20+ |
SOP-10 |
2960 |
诚信交易大量库存现货 |
询价 |


