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VNB10N07数据手册集成电路(IC)的配电开关负载驱动器规格书PDF

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厂商型号

VNB10N07

参数属性

VNB10N07 封装/外壳为TO-263-3,D²Pak(2 引线 + 接片),TO-263AB;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为集成电路(IC)的配电开关负载驱动器;产品描述:IC PWR DRIVER N-CHAN 1:1 D2PAK

功能描述

OMNIFET:全自动保护功率MOSFET
IC PWR DRIVER N-CHAN 1:1 D2PAK

封装外壳

TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

制造商

ST STMicroelectronics

中文名称

意法半导体 意法半导体集团

数据手册

原厂下载下载地址下载地址二

更新时间

2025-8-9 9:14:00

人工找货

VNB10N07价格和库存,欢迎联系客服免费人工找货

VNB10N07规格书详情

描述 Description

The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.

Fault feedback can be detected by monitoring the voltage at the input pin.

特性 Features

• ESD PROTECTION
• DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
• COMPATIBLE WITH STANDARD POWER MOSFET
• LINEAR CURRENT LIMITATION
• SHORT CIRCUIT PROTECTION
• THERMAL SHUT DOWN
• LOW CURRENT DRAWN FROM INPUT PIN
• DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
• INTEGRATED CLAMP

技术参数

更多
  • 制造商编号

    :VNB10N07

  • 生产厂家

    :ST

  • Technology

    :M0-2

  • RDS(on)_typ(mΩ)

    :100

  • General Description

    :OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

  • Marketing Status

    :Active

  • Package

    :D2PAK

  • RoHS Compliance Grade

    :Ecopack1

  • Clamp Voltage_typ(V)

    :70

  • Drain Current Limit_typ(A)

    :10

供应商 型号 品牌 批号 封装 库存 备注 价格
STM
1709+
TO-263
32500
普通
询价
ST
23+
TO-263
32732
原装正品代理渠道价格优势
询价
ST(意法)
24+/25+
10000
原装正品现货库存价优
询价
ST/意法半导体
21+
D2PAK-2
8860
原装现货,实单价优
询价
STMicroelectronics
23+/24+
TO-263-3
8600
只供原装进口公司现货+可订货
询价
ST
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
询价
ST
2023+
TO-263
5800
进口原装,现货热卖
询价
ST
20+
na
65790
原装优势主营型号-可开原型号增税票
询价
STMicroelectronics
24+
D2PAK
36500
一级代理/放心采购
询价
ST/意法半导体
21+
D2PAK-2
10000
原装公司现货
询价