VNB10N07数据手册集成电路(IC)的配电开关负载驱动器规格书PDF

厂商型号 |
VNB10N07 |
参数属性 | VNB10N07 封装/外壳为TO-263-3,D²Pak(2 引线 + 接片),TO-263AB;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为集成电路(IC)的配电开关负载驱动器;产品描述:IC PWR DRIVER N-CHAN 1:1 D2PAK |
功能描述 | OMNIFET:全自动保护功率MOSFET |
封装外壳 | TO-263-3,D²Pak(2 引线 + 接片),TO-263AB |
制造商 | ST STMicroelectronics |
中文名称 | 意法半导体 意法半导体集团 |
数据手册 | |
更新时间 | 2025-8-9 9:14:00 |
人工找货 | VNB10N07价格和库存,欢迎联系客服免费人工找货 |
VNB10N07规格书详情
描述 Description
The VNB10N07, VNK10N07FM, VNP10N07FI and VNV10N07 are monolithic devices made using STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh enviroments.
Fault feedback can be detected by monitoring the voltage at the input pin.
特性 Features
• ESD PROTECTION
• DIAGNOSTIC FEEDBACK THROUGH INPUT PIN
• COMPATIBLE WITH STANDARD POWER MOSFET
• LINEAR CURRENT LIMITATION
• SHORT CIRCUIT PROTECTION
• THERMAL SHUT DOWN
• LOW CURRENT DRAWN FROM INPUT PIN
• DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING)
• INTEGRATED CLAMP
技术参数
更多- 制造商编号
:VNB10N07
- 生产厂家
:ST
- Technology
:M0-2
- RDS(on)_typ(mΩ)
:100
- General Description
:OMNIFET :FULLY AUTOPROTECTED POWER MOSFET
- Marketing Status
:Active
- Package
:D2PAK
- RoHS Compliance Grade
:Ecopack1
- Clamp Voltage_typ(V)
:70
- Drain Current Limit_typ(A)
:10
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STM |
1709+ |
TO-263 |
32500 |
普通 |
询价 | ||
ST |
23+ |
TO-263 |
32732 |
原装正品代理渠道价格优势 |
询价 | ||
ST(意法) |
24+/25+ |
10000 |
原装正品现货库存价优 |
询价 | |||
ST/意法半导体 |
21+ |
D2PAK-2 |
8860 |
原装现货,实单价优 |
询价 | ||
STMicroelectronics |
23+/24+ |
TO-263-3 |
8600 |
只供原装进口公司现货+可订货 |
询价 | ||
ST |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
ST |
2023+ |
TO-263 |
5800 |
进口原装,现货热卖 |
询价 | ||
ST |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
STMicroelectronics |
24+ |
D2PAK |
36500 |
一级代理/放心采购 |
询价 | ||
ST/意法半导体 |
21+ |
D2PAK-2 |
10000 |
原装公司现货 |
询价 |