VL448

EPOXY BRIDGE RECTIFIERS 1^A anc* 30A Single Phase, Full Wave

448

Linearmotion0.2wattcompositionslidecontrol

448

SurfaceMountFuses

448IRF

PowerMOSFET(Vdss=500V,Rds(on)=0.60ohm,Id=11A)

DESCRIPTION ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS

AMR448N

N-Channel100-V(D-S)MOSFET

KeyFeatures: •LowrDS(on)trenchtechnology •Lowthermalimpedance •Fastswitchingspeed TypicalApplications: •LEDInverterCircuits •DC/DCConversionCircuits •Motordrives

AOD448

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD448isPb-free(meetsROHS&Sony259specifications).AO

AOD448

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=75A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

AOD448L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAOD448usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.ThisdeviceissuitableforuseinPWM,loadswitchingandgeneralpurposeapplications.StandardProductAOD448isPb-free(meetsROHS&Sony259specifications).AO

AOI448

N-Channel30-V(D-S)MOSFET

AOI448

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=35mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D