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100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

BR100N10

N-CHANNELMOSFETinaTO-220PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

BRB100N10

N-CHANNELMOSFETinaTO-263PlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

BSC100N10NSFG

OptiMOS??Power-Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

CEB100N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CEP100N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

FDP100N10

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220packaging •Lowswitchingloss •Ultralowgatecharge •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications •AC-DCconverters •LEDlighting •Unin

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP100N10

N-ChannelPowerTrench짰MOSFET

Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •RDS(on)=8.2mΩ(Typ.)@VGS=10V,ID=75A •Fastswitch

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FIR100N10PG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FIR100N10RG

N-ChannelEnhancementModePowerMosfet

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半导体深圳市福斯特半导体有限公司

FTD100N10A

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

未分类制造商

IXFK100N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFK100N10

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon

IXYS

IXYS Integrated Circuits Division

IXFN100N10

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Integrated Circuits Division

LMPC100N10

N-ChannelEnhancementModePowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

MTY100N10E

TMOSPOWERFET100AMPERES100VOLTSRDS(on)=0.011OHM

TMOSE-FET™PowerFieldEffecttransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforh

MotorolaMotorola, Inc

摩托罗拉

MTY100N10E

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTY100N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NDBA100N10B

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NDBA100N10B

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    VK100N10

  • 功能描述:

    线绕电阻器 - 底架安装 10 Ohms,100.0W,Fixed Wirewound Resistor

  • RoHS:

  • 制造商:

    Vishay/Dale

  • 电阻:

    7 Ohms

  • 容差:

    1 %

  • 功率额定值:

    100 W

  • 温度系数:

    50 PPM/C

  • 系列:

    RH

  • 工作温度范围:

    - 55 C to + 250 C

  • 尺寸:

    46.02 mm Dia. x 46.02 mm W x 88.9 mm L x 44.45 mm H

  • 封装:

    Bulk

  • 产品:

    Power Resistors Wirewound Aluminum Housed

供应商型号品牌批号封装库存备注价格
MR
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
23+
N/A
38460
正品授权货源可靠
询价
VISHAY/威世
23+
TO-92
50000
全新原装正品现货,支持订货
询价
VISHAY
08+
TO-92
600
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
VISHAY
08+
TO-92
600
全新原装,支持实单,假一罚十,德创芯微
询价
VISHAY
2023+
TO-92
700000
柒号芯城跟原厂的距离只有0.07公分
询价
VISHAY/威世
23+
NA/
3850
原厂直销,现货供应,账期支持!
询价
VK
23+
SOP16
90000
只做原装 全系列供应 价格优势 可开增票
询价
VINKA/永嘉微电
22+
SOP-16
680000
询价
VINKA/永嘉微电
21+
SOP-16
350000
永嘉微原厂渠道LCD/LED全系列在售
询价
更多VK100N10供应商 更新时间2024-5-24 9:30:00