Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC a

文件：200.29 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

文件：141.95 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

整流器 7.5A,60V,SINGLE TRENCH SKY RECT.

Vishay

威世

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 7.5A 60V TO-262AA

Vishay General Semiconductor - Diodes Division