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V30100C-E3/4W

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

V30100C-E3/4W

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.455VatIF=5A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

VB30100C-E3/4W

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VB30100C-E3/4W

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.455VatIF=5A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

VF30100C-E3/4W

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.455VatIF=5A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

VF30100C-E3/4W

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C-E3/4W

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VI30100C-E3/4W

DualHigh-VoltageTrenchMOSBarrierSchottkyRectifierUltraLowVF=0.455VatIF=5A

UltraLowVF=0.455VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Lowthermalresistance •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective

VishayVishay Siliconix

威世科技威世科技半导体

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