Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：149.55 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low forward voltage drop, low power losses

文件：141.98 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：TO-262-3，长引线，I²Pak，TO-262AA；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 20A 120V TO-262AA

Vishay General Semiconductor - Diodes Division