首页 >VI-235R-CU>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
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50A(35A)MINIATUREPOWERRELAY | AZETTLER American Zettler, Inc. | AZETTLER | ||
50A(35A)POWERRELAY | ZETTLERZettler Group 赛特勒赛特勒集团 | ZETTLER | ||
CRtimer TheBA225,BA225F,BA235,BA226,BA226F,andBA236aremonolithicICshavingindependentmonostablemultivibratorcircuitswhichconsumeverylowcurrent(0.75mAtyp.).Usingexternalresistorsandcapacitors,thetimingcontroltimecanbesetwithinarangefrom0.01msto100ms. AstheBA225, | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TO-126Plastic-EncapsulateTransistors FEATURES ComplementtoBD234/BD236/BD238respectively | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltage V(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
EPITAXIALSILICONPOWERTRANSISTORS EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications | CDIL CDIL | CDIL | ||
SiliconNPNtransistorinaTO-126FPlasticPackage. Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features ComplementarypairwithBD236. Applications Mediumpowerlinearandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SiliconNPNPowerTransistor DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
NPNPlastic-EncapsulateTransistors Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •PowerDissipation:PCM=1.25W,Ta=25°C •CollectorCurrent:IC=2A •ComplementtoBD234/236/238respectively •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •Epoxy | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
LowvoltageNPNpowertransistors Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypeisBD238. Features ■Lowsaturationvoltage ■NPNtransistors Applications ■Audio, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
Plastic-EncapsulatedTransistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
NPNpowertransistors Description ThedevicesaremanufacturedinPlanartechnologywith“BaseIsland”layout.Theresultingtransistorshowsexceptionalhighgainperformancecoupledwithverylowsaturationvoltage.ThePNPtypesareBD236andBD238respectively. Features ■NPNtransistors Applications ■Audio, | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-126package •ComplementtotypeBD234/236/238 APPLICATIONS •Formediumpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
MediumPowerLinearandSwitchingApplications MediumPowerLinearandSwitchingApplications •ComplementtoBD234/236/238respectively | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION TheBD235andBD237aresiliconepitaxial-baseNPNpowertransistorsinJedecSOT-32plasticpackageintededforuseinmediumpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareBD236andBD238respectively. ■SGS-THOMSONPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
TO-126Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1.25W(Tamb=25℃) CollectorcurrentICM:2A Collector-basevoltageV(BR)CBO:BD233:45VBD235:60VBD237:100V OperatingandstoragejunctiontemperaturerangeTJ:150℃Tstg:-65℃to+150℃ | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
NPNEpitaxialPlanarTransistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | WEITRON |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SILICONIX |
2019 |
CAN3 |
29000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
VICOR |
2023+ |
48V/95V/200W |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
VICOR |
23+ |
模块 |
377 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 |
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