Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：128.37 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Dual Common Cathode Schottky Rectifier

FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 275 °C max.10 s, per JESD 22-B106 • Material categorization: for definitions of compliance

文件：123.27 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技