| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VFT3045C | Dual Low-Voltage Trench MOS Barrier Schottky Rectifier 文件：74.57 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay 文件：131.49 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay 文件：131.49 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application 文件：130.85 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：129.18 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION 文件：129.18 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：82.25 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier 文件：83.82 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier 文件：83.82 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Trench MOS Barrier Schottky Rectifier 文件：87.07 Kbytes 页数：4 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
VFT3045C
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
18+ |
TO-220F |
41200 |
原装正品,现货特价 |
询价 | ||
VISHAY/威世 |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VISHAY/威世 |
24+ |
NA/ |
3332 |
原厂直销,现货供应,账期支持! |
询价 | ||
VISHAY |
25+ |
TO-220 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
ITO220AB |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
23+ |
ITO220AB |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世通 |
23+ |
ITO220AB |
6000 |
原装正品，支持实单 |
询价 | ||
VISHAY/威世 |
24+ |
TO126 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
Vishay General Semiconductor - |
25+ |
TO-220-3 全封装 隔离接片 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 |
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