Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

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VishayVishay Siliconix

威世科技

HONEYWELL
SOT89

Honeywell

霍尼韦尔

上传：深圳市粤科源兴科技有限公司

CUI
NA

CUI

上传：深圳市恒佳微电子有限公司