Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Com

文件：151.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Package：TO-220-3 全封装，隔离接片；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 100V ITO220

Vishay General Semiconductor - Diodes Division

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Com

文件：151.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

HONEYWELL
SOT89

Honeywell

霍尼韦尔

上传：深圳市粤科源兴科技有限公司

CUI
NA

CUI

上传：深圳市恒佳微电子有限公司