Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Power pack • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：86.13 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

文件：122.03 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

分立

Vishay

威世

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Power pack • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATION

文件：86.13 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：111.99 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 20A 45V TO-220AB

Vishay General Semiconductor - Diodes Division