Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

文件：101.67 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件：321.48 Kbytes 页数：2 Pages

ISC

无锡固电

High efficiency operation

文件：88.69 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

分立 Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

文件：101.67 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件：78.69 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30A 80V TO-263AB

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 30A 80V TO-263AB

Vishay General Semiconductor - Diodes Division