VBT1545CBP-E3_V01中文资料威世数据手册PDF规格书

厂商型号	VBT1545CBP-E3_V01
功能描述	Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
文件大小	102.51 Kbytes
页面数量	4 页
生产厂商	Vishay Vishay Siliconix
中文名称	威世威世科技公司
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-12-18 12:00:00
人工找货	VBT1545CBP-E3_V01价格和库存，欢迎联系客服免费人工找货

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 245 °C

• TJ 200 °C max. in solar bypass mode application

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in solar cell junction box as a bypass diode for

protection, using DC forward current without reverse bias.

MECHANICAL DATA

Case: D2PAK (TO-263AB)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: as marked

Mounting Torque: 10 in-lbs maximum