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VBMB165R05S中文资料微碧半导体数据手册PDF规格书
VBMB165R05S规格书详情
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS directive 2002/95/EC


