首页 >VBMB15R07S>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VBMB15R07S | N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Pow 文件：915.04 Kbytes 页数：12 Pages | VBSEMI 微碧半导体 | VBSEMI | |
VBMB15R07S | MOSFET | Vbsemi 微碧半导体 | Vbsemi | |
N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Pow 文件：915.04 Kbytes 页数：12 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Pow 文件：915.04 Kbytes 页数：12 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS directive 2002/95/EC APPLICATIONS • Switch Mode Pow 文件：915.04 Kbytes 页数：12 Pages | VBSEMI 微碧半导体 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi(台湾微碧) |
2447 |
TO-220F |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
VBSEMI |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 |
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