N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

文件：524.56 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 30 V (D-S) MOSFET

文件：702.66 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Hall Effect Base Current Switch

Features:  8.3 mΩ internal conductor resistance  Output “Low” when IP>= Iop  Output “High” when IP

文件：398.23 Kbytes 页数：4 Pages

DIWELL

Hall Effect Base Current Switch

文件：404.82 Kbytes 页数：4 Pages

Winson