N-Channel 200 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch • DT-Trench Power MOSFET

文件：524.75 Kbytes 页数：6 Pages

VBSEMI

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Power MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC

文件：458.97 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 200 V (D-S) MOSFET

文件：509.79 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-Channel 200 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch • DT-Trench Power MOSFET

文件：524.75 Kbytes 页数：6 Pages

VBSEMI

微碧半导体