N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：1.31522 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：1.32253 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

2-SMD

VISHAY/威世

上传：深圳市华芯伟电子科技有限公司