P-Channel 30-V (D-S) MOSFET

文件：656.14 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

文件：594.15 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

KK 3.96 / 7,92 WAFER ASSY WITH LOCK

文件：85.26 Kbytes 页数：1 Pages

MOLEX

莫仕

Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous

文件：20.82 Kbytes 页数：2 Pages

NTE

GENERAL PURPOSE AMPLIFIER

Product Description The RF2338 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：55.55 Kbytes 页数：4 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2338 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：55.55 Kbytes 页数：4 Pages

RFMD

威讯联合