| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
VBE16R05S | N-Channel 600V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche and Current • Compliant to RoHS directive 2002/95/EC 文件：1.04577 Mbytes 页数：12 Pages | VBSEMI 微碧半导体 | VBSEMI | |
VBE16R05S | MOSFET | Vbsemi 微碧半导体 | Vbsemi | |
Power MOSFET FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC 文件：891.23 Kbytes 页数：11 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
N-Channel 600V(D-S) Super Junction Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche and Current • Compliant to RoHS directive 2002/95/EC 文件：1.04577 Mbytes 页数：12 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
Power MOSFET FEATURES • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V, VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC 文件：891.23 Kbytes 页数：11 Pages | VBSEMI 微碧半导体 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI |
24+ |
con |
35960 |
查现货到京北通宇商城 |
询价 | ||
IXYS |
22+ |
ECOPAC1 |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS |
21+ |
ECO-PAC1 |
1000 |
主打产品价格优惠.全新原装正品 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
25+ |
ECO-PAC1 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
IXYS |
23+ |
N/A |
12500 |
IXYS全系列在售 |
询价 | ||
24+ |
N/A |
63000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
IXYS |
23+ |
N/A |
9800 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 |
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