N- and P-Channel 20-V (D-S) MOSFETs

FEATURES • Halogen-free • TrenchFET® Power MOSFETs APPLICATIONS • Load Switch • DC/DC Converter

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VBSEMI

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MOSFET

Vbsemi

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N- and P- Channel 20 V (D-S) MOSFET

文件：737.1 Kbytes 页数：9 Pages

VBSEMI

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K-Band 2-Stage Power Amplifier

DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High Power Amplifier (HPA) . FEATURES ● RF frequency : 27.5 to 30.0 GHz ● Linear gain : ³ 9 dB ● P1dB : ³ 29 dBm ● DC power : Vd = 5 V, Id1 + Id2 = 1080 mA

文件：28 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital

文件：179.93 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

文件：234.99 Kbytes 页数：17 Pages

PANASONIC

松下