Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

文件：105.24 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：149.55 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

VISHAY/威世
NA

VISHAY/威世

上传：深圳瞄钧科技有限公司

VISHAY/威世
2-SMD

VISHAY/威世

上传：深圳市华芯伟电子科技有限公司