首页 >VB20150C-E3/W>规格书列表

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V20150C-E3	文件：218.83 Kbytes Page：6 Pages	DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V20150C-E3	文件：154.29 Kbytes Page：5 Pages	DualHighVoltageTrenchMOSBarrierSchottkyRectifier	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V20150C-E3	文件：161.22 Kbytes Page：6 Pages	TrenchMOSSchottkytechnology UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
VB20150C-E3	文件：314.45 Kbytes Page：2 Pages	SchottyBarrierDiode FEATURES ·LowForwardVoltageDrop,LowPowerlosses ·HighEfficiencyOperation ·SMD APPLICATIONS ·SwitchingPowerSupply(SPS) ·HighFrequencyConverter ·DC/DCConverter	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
VB20150C-E3	文件：218.83 Kbytes Page：6 Pages	DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
VB20150C-E3	文件：161.22 Kbytes Page：6 Pages	TrenchMOSSchottkytechnology UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
VF20150C-E3	文件：161.22 Kbytes Page：6 Pages	TrenchMOSSchottkytechnology UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
VF20150C-E3	文件：218.83 Kbytes Page：6 Pages	DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
VI20150C-E3	文件：218.83 Kbytes Page：6 Pages	DualHighVoltageTrenchMOSBarrierSchottkyRectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220ABa	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
VI20150C-E3	文件：161.22 Kbytes Page：6 Pages	TrenchMOSSchottkytechnology UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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