Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

文件：106.6 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

High voltage power Schottky rectifier

Description This dual center tab Schottky rectifier is suited for high frequency switched mode power supplies. Features  High junction temperature capability  Good trade off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  ECOPA

文件：293.97 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

VISHAY/威世
NA

VISHAY/威世

上传：深圳瞄钧科技有限公司

VISHAY/威世
2-SMD

VISHAY/威世

上传：深圳市华芯伟电子科技有限公司