V62SLASH24632-01XE说明书PDF资料供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
V62SLASH24632-01XE	文件：2.26321 Mbytes Page：49 Pages	丝印：7H6005DCA；Package：HTSSOP；TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.26321 Mbytes 页数：49 Pages	TI 德州仪器	TI
V62SLASH24632-01XE	文件：2.26459 Mbytes Page：49 Pages	丝印：7H6005DCA；Package：HTSSOP；TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers 1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran 文件：2.26459 Mbytes 页数：49 Pages	TI 德州仪器	TI
V6309MSP3B	文件：0 bytes Page：0 Pages	UEM SOT-23	UEM 上传：深圳市宏誉半导体有限公司	UEM

更多V62SLASH24632-01XE供应商更新时间2025-9-26 16:41:00