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V62SLASH03639-01XE中文资料德州仪器数据手册PDF规格书

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厂商型号

V62SLASH03639-01XE

功能描述

8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES

丝印标识

V263EP

封装外壳

LQFP

文件大小

766.64 Kbytes

页面数量

50

生产厂商

TI

中文名称

德州仪器

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-1 12:00:00

人工找货

V62SLASH03639-01XE价格和库存,欢迎联系客服免费人工找货

V62SLASH03639-01XE规格书详情

Controlled Baseline

– One Assembly/Test Site, One Fabrication

Site

Extended Temperature Performance of

–55°C to 125°C

Enhanced Diminishing Manufacturing

Sources (DMS) Support

Enhanced Product-Change Notification

Qualification Pedigree†

Choice of Memory Organizations

– SN74V263 – 8192 × 18/16384 × 9

– SN74V273 – 16384 × 18/32768 × 9

– SN74V283 – 32768 × 18/65536 × 9

– SN74V293 – 65536 × 18/131072 × 9

133-MHz Operation

7.5-ns Read/Write Cycle Time

User-Selectable Input and Output Port Bus

Sizing

– ×9 in to ×9 out

– ×9 in to ×18 out

– ×18 in to ×9 out

– ×18 in to ×18 out

Big-Endian/Little-Endian User-Selectable

Byte Representation

5-V-Tolerant Inputs

Fixed, Low First-Word Latency

Zero-Latency Retransmit

Master Reset Clears Entire FIFO

Partial Reset Clears Data, but Retains

Programmable Settings

Empty, Full, and Half-Full Flags Signal FIFO

Status

Programmable Almost-Empty and

Almost-Full Flags; Each Flag Can Default to

One of Eight Preselected Offsets

Selectable Synchronous/Asynchronous

Timing Modes for Almost-Empty and

Almost-Full Flags

Program Programmable Flags by Either

Serial or Parallel Means

Select Standard Timing (Using EF and FF

Flags) or First-Word Fall-Through (FWFT)

Timing (Using OR and IR Flags)

Output Enable Puts Data Outputs in

High-Impedance State

Easily Expandable in Depth and Width

Independent Read and Write Clocks Permit

Reading and Writing Simultaneously

High-Performance Submicron CMOS

Technology

Glueless Interface With ’C6x DSPs

Available in 80-Pin Thin Quad Flat Pack

(TQFP) Package

description/ordering information

The SN74V263, SN74V273, SN74V283, and SN74V293 are exceptionally deep, high-speed, CMOS first-in

first-out (FIFO) memories with clocked read and write controls and a flexible bus-matching ×9/×18 data flow.

There is flexible ×9/×18 bus matching on both read and write ports.

The period required by the retransmit operation is fixed and short.

The first-word data-latency period, from the time the first word is written to an empty FIFO to the time it can be

read, is fixed and short.

These FIFOs are particularly appropriate for network, video, telecommunications, data communications, and

other applications that need to buffer large amounts of data and match buses of unequal sizes.

Each FIFO has a data input port (Dn) and a data output port (Qn), both of which can assume either an 18-bit

or 9-bit width, as determined by the state of external control pins’ input width (IW) and output width (OW) during

the master-reset cycle.

The input port is controlled by write-clock (WCLK) and write-enable (WEN) inputs. Data is written into the FIFO

on every rising edge of WCLK when WEN is asserted. The output port is controlled by read-clock (RCLK) and

read-enable (REN) inputs. Data is read from the FIFO on every rising edge of RCLK when REN is asserted.

An output-enable (OE) input is provided for 3-state control of the outputs.

供应商 型号 品牌 批号 封装 库存 备注 价格
ST
2511
TO-223
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