V61M103C-M3SLASHP说明书PDF资料供应商报价-114ic电子网

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V61M103C-M3SLASHP	文件：148.11 Kbytes Page：5 Pages	Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 5 A •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V61M103C-M3/P	文件：148.11 Kbytes Page：5 Pages	DualHighVoltageTMBS®(TrenchMOSBarrierSchottky)RectifierUltraLowVF=0.37VatIF=5A •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

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V61M103C-M3SLASHP

文件：148.11 Kbytes

Page：5 Pages

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.37 V at IF = 5 A

•TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmaximum,10s, perJESD22-B106

VishayVishay Siliconix

威世科技威世科技半导体

Vishay