Trench MOS Schottky technology

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VishayVishay Siliconix

威世科技

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.43 V at IF = 5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

文件：122.72 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：122.72 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

分立

Vishay

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A

Trench MOS Schottky technology\n Very low profile - typical height of 1.7 mm\n Ideal for automated placement\n\n \n;

Vishay

威世科技

肖特基二极管与整流器 60A, 120V, SMPD, TRENCH SKY RECT.

Vishay

威世科技

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 120V 30A TO263AC

Vishay General Semiconductor - Diodes Division