V53C318165A50中文资料茂矽电子数据手册PDF规格书

Description

The V53C318165A is a 1048576 x 16 bit high-performance CMOS dynamic random access memory. The V53C318165A offers Page mode operation with Extended Data Output. The V53C318165A has an symmetric address, 10-bit row and 10-bit column.

Features

■ 1M x 16-bit organization

■ EDO Page Mode for a sustained data rate of 50 MHz

■ RAS access time: 50, 60, 70 ns

■ Dual CAS Inputs

■ Low power dissipation

■ Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh, Hidden Refresh, and Self Refresh.

■ Refresh Interval: 1024 cycles/16 ms

■ Available in 42-pin 400 mil SOJ and 50/44-pin 400 mil TSOP-II

■ Single +3.3 V ±0.3 V Power Supply

■ TTL Interface