Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：147.57 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

文件：147.57 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：147.57 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世