V40PW12C

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A

V40PW12C

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A

V40PW12C_V01

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A

V40PW12CHM3/I

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTT 120V SLIMDPAK

Vishay General Semiconductor - Diodes Division

V40PW12C-M3/I

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTT 120V SLIMDPAK

Vishay General Semiconductor - Diodes Division