High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：142.35 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A

文件：121.4 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：142.35 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.49 V at IF = 5 A

分立 Very low profile - typical height of 1.3 mm\nTrench MOS Schottky technology\nIdeal for automated placement;

Vishay

威世科技

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTT 120V SLIMDPAK

Vishay General Semiconductor - Diodes Division

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTT 120V SLIMDPAK

Vishay General Semiconductor - Diodes Division