Trench MOS Schottky technology

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VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106

文件：133.57 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：133.57 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：120.95 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier VF = 0.55 V at IF = 5 A

·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

Vishay

威世科技

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 150V TO220

Vishay General Semiconductor - Diodes Division