Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：151 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：725.97 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

文件：151 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：725.97 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：725.97 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：135.72 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A

Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ;

Vishay

威世

Package：TO-220-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 40A 120V TO-220AB

Vishay General Semiconductor - Diodes Division

Package：TO-220-3；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 40A 120V TO-220AB

Vishay General Semiconductor - Diodes Division