Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：123.19 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：122.55 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.26 V at IF = 5 A

Trench MOS Schottky technology\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Vishay

威世

Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：123.19 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

文件：119.71 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

文件：119.71 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.26 V at IF = 5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：122.55 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.26 V at IF = 5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：122.55 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件：117.32 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

Low-Voltage Trench MOS Barrier Schottky Rectifier

文件：127.26 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司