V40DL45

Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A

V40DL45

Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

V40DL45_V01

Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -A

V40DL45BP

TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection

FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi

V40DL45BP

TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.26 V at IF = 5A; Trench MOS Schottky technology\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

分立

V40DL45BP_V01

TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection

FEATURES •TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C •Materialcategorization:fordefi

V40DL45HM3_ASLASHI

Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.26 V at IF = 5 A

•TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive

V40DL45-M3/ V40DL45HM3

Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.26 V at IF = 5 A; ·Trench MOS Schottky technology\n·Very low profile - typical height of 1.7 mm\n·Ideal for automated placement\n;

分立

V40DL45-M3SLASHI

Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.26 V at IF = 5 A

•TrenchMOSSchottkytechnology •Verylowprofile-typicalheightof1.7mm •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -Automotive

V40DL45BP

Trench MOS Barrier Schottky Rectifier