Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

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VishayVishay Siliconix

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：99.2 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：125.45 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世