Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5 A

Trench MOS Schottky technology\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Vishay

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A

分立

Vishay

威世

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A

Trench MOS Schottky technology\n Very low profile - typical height of 1.7 mm\n Ideal for automated placement\n\n ;

Vishay

威世

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE SCHOTTKY 120V 15A TO263AC

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 100V SMPD

Vishay General Semiconductor - Diodes Division