V35PW12

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -

V35PW12

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A

V35PW12_V01

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES •Verylowprofile-typicalheightof1.3mm •TrenchMOSSchottkytechnology •Idealforautomatedplacement •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof260°C •AEC-Q101qualifiedavailable -

V35PW12HM3/I

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 120V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

V35PW12-M3/I

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 120V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division