High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

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VishayVishay Siliconix

威世科技

全志/ALLWINNER
QFP128

全志/ALLWINNER

上传：深圳市柯尔基电子有限公司