High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3

文件：158.66 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3

文件：158.76 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3

文件：158.66 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

High Current Density Surface-Mount (TMBS®) Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 5 A

• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3

文件：158.76 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技