Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：123.14 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：122.5 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A

Trench MOS Schottky technology\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Vishay

威世

Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：123.14 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

文件：119.53 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

TMBS짰 (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

文件：119.53 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：122.5 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Low-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.28 V at IF = 5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：122.5 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Trench MOS Barrier Schottky Rectifier

文件：122.64 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：115.54 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世