Dual TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：125.68 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：126.57 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：124.24 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：126.57 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Trench MOS Barrier Schottky Rectifier

文件：120.6 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.34 V at IF = 5 A

分立 Trench MOS Schottky technology\nVery low profile - typical height of 1.7 mm\nIdeal for automated placement;

Vishay

威世

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 60V TO263AC

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 60V SMPD

Vishay General Semiconductor - Diodes Division