Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：110.16 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier

• Very low profile - typical height of 1.7 mm • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available

文件：110.16 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier

• Very low profile - typical height of 1.7 mm • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available

文件：110.16 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：110.16 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：110.16 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier

Very low profile - typical height of 1.7 mm\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：30A,170V,SMPD, TRENCH SKY RECT.

Vishay General Semiconductor - Diodes Division

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：30A,170V,SMPD, TRENCH SKY RECT.

Vishay General Semiconductor - Diodes Division