Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a

文件：216.26 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世威世科技公司

High voltage power Schottky rectifier

Features  High junction temperature capability  Good trade off between leakage current and forward voltage drop  Low leakage current  Avalanche capability specified  Insulated package: TO-220FPAB  Insulating voltage = 2000 VRMS sine  ECOPACK®2 compliant component for D²PAK on demand

文件：566.83 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

SOP-8

EM

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