Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：107.81 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：107.17 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier

分立 Very low profile - typical height of 0.65 mm\nIdeal for automated placement\nTrench MOS Schottky technology;

Vishay

威世科技

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 0.65 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop • Low power loss, high efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：107.81 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: fo

文件：113.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: fo

文件：113.33 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: fo

文件：111.12 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Low profile package • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: fo

文件：111.12 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：107.64 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：112.65 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技