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V29C51400T中文资料PDF规格书
V29C51400T规格书详情
Description
The V29C51400T/V29C51400B is a high speed 262,144 x 16 bit or 524,288 x 8-bit CMOS flash memory. Writing or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.
Features
■ 256K x 16-bit or 512K x 8-bit Organization
■ Address Access Time: 70, 90, 120 ns
■ Single 5V ± 10 Power Supply
■ Sector Erase Mode Operation
■ 16KB Boot Block (lockable)
■ 1K bytes per Sector, 512 Sectors
– Sector-Erase Cycle Time: 10ms (Max)
– Byte-Write Cycle Time: 20µs (Max)
■ Minimum 10,000 Erase-Program Cycles
■ Low power dissipation
– Active Read Current: 19mA (Typ)
– Active Program Current: 30mA (Typ)
– Standby Current: 100µA (Max)
■ Hardware Data Protection
■ Low VCC Program Inhibit Below 3.5V
■ Self-timed write/erase operations with end-ofcycle detection
– DATA Polling
– Toggle Bit
■ CMOS and TTL Interface
■ Available in two versions
– V29C51400T (Top Boot Block)
– V29C51400B (Bottom Boot Block)
■ Packages:
– 48-pin TSOP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Cypress Semiconductor Corp |
21+ |
100-LBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
AMD |
2023+ |
PLCC |
50000 |
原装现货 |
询价 | ||
英飞凌/赛普拉斯 |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
Cypress |
23+ |
64FBGA (11x13) |
8000 |
只做原装现货 |
询价 | ||
CypressSemiconductorCorp |
19+ |
64-FBGA(11x13) |
26580 |
存储IC一手货源,极具优势! |
询价 | ||
MPS |
23+ |
QFN10 |
1200 |
全新原装 |
询价 | ||
CYPRESS/赛普拉斯 |
2016 |
NA |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
Cypress |
22+ |
64FBGA (11x13) |
9000 |
原厂渠道,现货配单 |
询价 | ||
MPS |
22+ |
QFN10 |
5000 |
只做原装,假一赔十 15118075546 |
询价 | ||
Cypress Semiconductor Corp |
21+ |
64-FBGA(11x13) |
56200 |
一级代理/放心采购 |
询价 |