丝印：V29；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES • Dual silicon planar Zener diodes, common cathode • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 . Replace “C” with “B” for 2 tolerance • The parameters are valid for both diodes in one case.VZ and Rzj of the two

文件：119.89 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Description The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. Features ■

文件：74.54 Kbytes 页数：16 Pages

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1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Description The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. Features ■

文件：74.54 Kbytes 页数：16 Pages

MOSEL

茂矽电子

1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Description The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. Features ■

文件：74.54 Kbytes 页数：16 Pages

MOSEL

茂矽电子

1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Description The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. Features ■

文件：74.54 Kbytes 页数：16 Pages

MOSEL

茂矽电子

1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Description The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. Features ■

文件：74.54 Kbytes 页数：16 Pages

MOSEL

茂矽电子

1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Description The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. Features ■

文件：74.54 Kbytes 页数：16 Pages

MOSEL

茂矽电子

1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Description The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. Features ■

文件：74.54 Kbytes 页数：16 Pages

MOSEL

茂矽电子

1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Description The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. Features ■

文件：74.54 Kbytes 页数：16 Pages

MOSEL

茂矽电子

1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY

Description The V29C51001T/V29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. Features ■

文件：74.54 Kbytes 页数：16 Pages

MOSEL

茂矽电子