High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：101.96 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：101.32 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.45 V at IF = 5 A

分立 Very low profile - typical height of 1.1 mm\nIdeal for automated placement\nTrench MOS Schottky technology;

Vishay

威世

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

文件：101.96 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：101.32 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：101.32 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：101.32 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：101.32 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：101.32 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：101.32 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司