High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

文件：97.85 Kbytes 页数：5 Pages

VishayVishay Siliconix

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High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5 A

• Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：140.21 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.54 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3

文件：97.85 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.45 V at IF = 5 A

• Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：140.21 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世